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Low‐Temperature In Situ Large‐Strain Plasticity of Silicon Nanowires
Author(s) -
Han X. D.,
Zheng K.,
Zhang Y. F.,
Zhang X. N.,
Zhang Z.,
Wang Z. L.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200602705
Subject(s) - nanowire , materials science , plasticity , strain (injury) , in situ , silicon , tension (geology) , silicon nanowires , fracture (geology) , nanotechnology , scanning electron microscope , crystallography , composite material , optoelectronics , biology , chemistry , ultimate tensile strength , organic chemistry , anatomy
The large‐strain plasticity (LSP) of single‐crystalline silicon nanowires (Si NWs) observed in situ at room temperature by axial tension experiments carried out in an ultrahigh‐resolution electron microscope is reported. The LSP is demonstrated to result in a fourfold reduction in NW diameter before fracture (see figure), which is three orders of magnitude higher than that of bulk Si.