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Nonvolatile Memory Elements Based on Organic Materials
Author(s) -
Scott J. C.,
Bozano L. D.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200602564
Subject(s) - materials science , non volatile memory , rectification , optoelectronics , resistive random access memory , capacitive sensing , nanotechnology , voltage , current (fluid) , retention time , resistive touchscreen , charge (physics) , engineering physics , electrical engineering , chemistry , physics , chromatography , quantum mechanics , engineering
Many organic electronic devices exhibit switching behavior, and have therefore been proposed as the basis for a nonvolatile memory (NVM) technology. This Review summarizes the materials that have been used in switching devices, and describes the variety of device behavior observed in their charge–voltage (capacitive) or current–voltage (resistive) response. A critical summary of the proposed charge‐transport mechanisms for resistive switching is given, focusing particularly on the role of filamentary conduction and of deliberately introduced or accidental nanoparticles. The reported device parameters (on–off ratio, on‐state current, switching time, retention time, cycling endurance, and rectification) are compared with those that would be necessary for a viable memory technology.