Charge‐Injection Barriers at Realistic Metal/Organic Interfaces: Metals Become Faceless | Zendy

Grobosch M. | Zendy; Knupfer M. | Zendy

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Charge‐Injection Barriers at Realistic Metal/Organic Interfaces: Metals Become Faceless

Author(s) -

Grobosch M.,

Knupfer M.

Publication year - 2007

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.200602435

Subject(s) - materials science , metal , sputtering , semiconductor , organic semiconductor , optoelectronics , nanotechnology , thin film , metallurgy

Interfaces between the organic semiconductor α‐sexithiophene and sputter‐cleaned (ideal) metals or contaminated (realistic) metals are investigated by a combined X‐ray and UV photoemission spectroscopic study. The experimental results indicate a substantial impact of metal‐surface contamination on the electronic properties of the interface. In particular, the hole‐injection barrier is almost independent of the type of the underlying metal (see figure).

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