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Charge‐Injection Barriers at Realistic Metal/Organic Interfaces: Metals Become Faceless
Author(s) -
Grobosch M.,
Knupfer M.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200602435
Subject(s) - materials science , metal , sputtering , semiconductor , organic semiconductor , optoelectronics , nanotechnology , thin film , metallurgy
Interfaces between the organic semiconductor α‐sexithiophene and sputter‐cleaned (ideal) metals or contaminated (realistic) metals are investigated by a combined X‐ray and UV photoemission spectroscopic study. The experimental results indicate a substantial impact of metal‐surface contamination on the electronic properties of the interface. In particular, the hole‐injection barrier is almost independent of the type of the underlying metal (see figure).