High Ambipolar Mobility in a Highly Ordered Smectic Phase of a Dialkylphenylterthiophene Derivative That Can Be Applied to Solution‐Processed Organic Field‐Effect Transistors | Zendy

Funahashi M. | Zendy; Zhang F. | Zendy; Tamaoki N. | Zendy

Premium

High Ambipolar Mobility in a Highly Ordered Smectic Phase of a Dialkylphenylterthiophene Derivative That Can Be Applied to Solution‐Processed Organic Field‐Effect Transistors

Author(s) -

Funahashi M.,

Zhang F.,

Tamaoki N.

Publication year - 2007

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.200602319

Subject(s) - ambipolar diffusion , materials science , phase (matter) , electron mobility , transistor , derivative (finance) , field (mathematics) , electron , nanotechnology , optoelectronics , analytical chemistry (journal) , condensed matter physics , organic chemistry , physics , chemistry , quantum mechanics , mathematics , voltage , financial economics , pure mathematics , economics

A phenylterthiophene derivative that exhibits a highly ordered smectic phase around room temperature is synthesized. In the bulk of the smectic phase, ambipolar carrier transport is observed and electron mobility exceeds 0.2 cm 2 V –1 s –1 . Thin‐film transistors (see the AFM image in the figure) are fabricated by a spin‐coating method and exhibit p‐type operation, a field‐effect mobility of 0.02 cm 2 V –1 s –1 , and an on/off ratio of 10 6 .

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research