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High Ambipolar Mobility in a Highly Ordered Smectic Phase of a Dialkylphenylterthiophene Derivative That Can Be Applied to Solution‐Processed Organic Field‐Effect Transistors
Author(s) -
Funahashi M.,
Zhang F.,
Tamaoki N.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200602319
Subject(s) - ambipolar diffusion , materials science , phase (matter) , electron mobility , transistor , derivative (finance) , field (mathematics) , electron , nanotechnology , optoelectronics , analytical chemistry (journal) , condensed matter physics , organic chemistry , physics , chemistry , quantum mechanics , mathematics , voltage , financial economics , pure mathematics , economics
A phenylterthiophene derivative that exhibits a highly ordered smectic phase around room temperature is synthesized. In the bulk of the smectic phase, ambipolar carrier transport is observed and electron mobility exceeds 0.2 cm 2 V –1 s –1 . Thin‐film transistors (see the AFM image in the figure) are fabricated by a spin‐coating method and exhibit p‐type operation, a field‐effect mobility of 0.02 cm 2 V –1 s –1 , and an on/off ratio of 10 6 .