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Inorganic Semiconductors for Flexible Electronics
Author(s) -
Sun Y.,
Rogers J. A.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200602223
Subject(s) - materials science , electronics , thin film transistor , transistor , semiconductor , flexible electronics , nanotechnology , electronic circuit , silicon , optoelectronics , thin film , semiconductor device , nanowire , electrical engineering , engineering , layer (electronics) , voltage
Abstract This article reviews several classes of inorganic semiconductor materials that can be used to form high‐performance thin‐film transistors (TFTs) for large area, flexible electronics. Examples ranging from thin films of various forms of silicon to nanoparticles and nanowires of compound semiconductors are presented, with an emphasis on methods of depositing and integrating thin films of these materials into devices. Performance characteristics, including both electrical and mechanical behavior, for isolated transistors as well as circuits with various levels of complexity are reviewed. Collectively, the results suggest that flexible or printable inorganic materials may be attractive for a range of applications not only in flexible but also in large‐area electronics, from existing devices such as flat‐panel displays to more challenging (in terms of both cost and performance requirements) systems such as large area radiofrequency communication devices, structural health monitors, and conformal X‐ray imagers.