Mg 3 N 2 ‐Ga: Nanoscale Semiconductor–Liquid Metal Heterojunctions inside Graphitic Carbon Nanotubes | Zendy

Hu J. Q. | Zendy; Bando Y. | Zendy; Zhan J. H. | Zendy; Li C. Z. | Zendy; Golberg D. | Zendy

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Mg 3 N 2 ‐Ga: Nanoscale Semiconductor–Liquid Metal Heterojunctions inside Graphitic Carbon Nanotubes

Author(s) -

Hu J. Q.,

Bando Y.,

Zhan J. H.,

Li C. Z.,

Golberg D.

Publication year - 2007

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.200602182

Subject(s) - materials science , heterojunction , carbon nanotube , nanoscopic scale , semiconductor , nanometre , nanowire , transmission electron microscopy , nanotechnology , metal , optoelectronics , composite material , metallurgy

Mg 3 N 2 ‐Ga nanoscale semiconductor–liquid metal heterojunctions homogeneously coated with very thin graphitic carbon nanotube (GCNT) layers are fabricated (see figure). Most of the junctions have a uniform diameter of ca. 100–200 nm. GCNTs coated on the nanowire junctions are only several nanometers thick. A convergent electron beam generated in a transmission electron microscope is demonstrated to be an effective tool for delicate manipulation of a junction.

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