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High‐Temperature Resistance Anomaly at a Strontium Titanate Grain Boundary and Its Correlation with the Grain‐Boundary Faceting–Defaceting Transition
Author(s) -
Lee S. B.,
Lee J.H.,
Cho P.S.,
Kim D.Y.,
Sigle W.,
Phillipp F.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200602153
Subject(s) - faceting , materials science , grain boundary , strontium titanate , condensed matter physics , grain boundary strengthening , grain boundary diffusion coefficient , anomaly (physics) , boundary (topology) , grain growth , grain size , composite material , microstructure , nanotechnology , thin film , physics , mathematical analysis , mathematics
A correlation between a grain‐boundary structural transition and a change in electrical properties is demonstrated, using a SrTiO 3 bicrystalline grain boundary as a model system. A grain‐boundary faceting–defaceting transition is seen between 1500 and 1600 °C (the grain‐boundary of the bicrystal annealed at 1600 °C for one day is shown in the figure) accompanied by an abrupt change in grain‐boundary electrical impedance.