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Realization of Room‐Temperature Ferromagnetism and of Improved Carrier Mobility in Mn‐Doped ZnO Film by Oxygen Deficiency, Introduced by Hydrogen and Heat Treatments
Author(s) -
Park S. Y.,
Kim P. J.,
Lee Y. P.,
Shin S. W.,
Kim T. H.,
Kang J.H.,
Rhee J. Y.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200602144
Subject(s) - materials science , ferromagnetism , doping , crystallite , electron mobility , hydrogen , oxygen deficiency , oxygen , realization (probability) , optoelectronics , condensed matter physics , metallurgy , chemistry , physics , organic chemistry , statistics , mathematics
The room‐temperature ferromagnetic (RTFM) ordering with a very low carrier mobility occurs in polycrystalline Mn‐doped ZnO film with δ ∼ 0.04. We successfully fabricated RTFM Zn 0.96 Mn 0.04 O:H film with a substantially improved carrier mobility (∼ 400% larger than that of the as‐grown sample) through the hydrogen‐implantation and a subsequent heat treatment.