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Fabrication and Impedance Analysis of n‐ZnO Nanorod/p‐Si Heterojunctions to Investigate Carrier Concentrations in Zn/O Source‐ Ratio‐Tuned ZnO Nanorod Arrays
Author(s) -
Wu J.J.,
Wong D. K.P.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200602052
Subject(s) - nanorod , heterojunction , materials science , molar ratio , zinc , fabrication , optoelectronics , metal , chemical vapor deposition , deposition (geology) , nanotechnology , electrical impedance , charge carrier , analytical chemistry (journal) , electrical engineering , chemistry , organic chemistry , medicine , paleontology , alternative medicine , engineering , pathology , sediment , metallurgy , biology , catalysis
Charge‐carrier concentrations of well‐aligned ZnO nanorods grown on p ++ ‐Si substrates are determined by means of ac impedance analysis of devices fabricated directly on as‐deposited samples. This approach also demonstrates that the carrier concentration can be controlled by varying the Zn/O source molar ratio (MR) during metal–organic chemical vapor deposition (see figure).