Premium
Piezoelectric Gated Diode of a Single ZnO Nanowire
Author(s) -
He J. H.,
Hsin C. L.,
Liu J.,
Chen L. J.,
Wang Z. L.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200601908
Subject(s) - materials science , nanowire , piezoelectricity , optoelectronics , diode , bending , voltage , schematic , nanogenerator , electrical engineering , composite material , engineering
A ZnO nanowire behaves like a rectifier under bending strain , as demonstrated by its current–voltage characteristics (see graph). This is interpreted with the consideration of a piezoelectricity‐induced potential energy barrier at the interface of the conductive tip and nanowire (see schematic). Under appropriate bending and voltage control, each NW could correspond to a device element for random‐access‐memory, diode, and force‐sensor applications.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom