Premium
Piezoelectric Gated Diode of a Single ZnO Nanowire
Author(s) -
He J. H.,
Hsin C. L.,
Liu J.,
Chen L. J.,
Wang Z. L.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200601908
Subject(s) - materials science , nanowire , piezoelectricity , optoelectronics , diode , bending , voltage , schematic , nanogenerator , electrical engineering , composite material , engineering
A ZnO nanowire behaves like a rectifier under bending strain , as demonstrated by its current–voltage characteristics (see graph). This is interpreted with the consideration of a piezoelectricity‐induced potential energy barrier at the interface of the conductive tip and nanowire (see schematic). Under appropriate bending and voltage control, each NW could correspond to a device element for random‐access‐memory, diode, and force‐sensor applications.