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Air‐Stable n‐Channel Organic Semiconductors Based on Perylene Diimide Derivatives without Strong Electron Withdrawing Groups
Author(s) -
Ling M.M.,
Erk P.,
Gomez M.,
Koenemann M.,
Locklin J.,
Bao Z.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200601705
Subject(s) - perylene , diimide , materials science , organic semiconductor , semiconductor , polar effect , substrate (aquarium) , thin film transistor , pulmonary surfactant , fabrication , transistor , optoelectronics , electron , photochemistry , chemical engineering , nanotechnology , organic chemistry , molecule , chemistry , alternative medicine , voltage , oceanography , pathology , engineering , layer (electronics) , quantum mechanics , medicine , physics , geology
Air‐stable transistors based on perylene diimides without strong electron withdrawing groups (see figure) are reported. Through varying the device fabrication process, electron mobilities on the order of 0.1 cm 2 V –1 s –1 are achieved by using silica surfaces treated with a surfactant at elevated substrate temperatures. The devices show good air‐stability, even after prolonged storage in air (> 80 days). These compounds are potentially useful air‐stable n‐type semiconductors for thin film transistors.