Air‐Stable n‐Channel Organic Semiconductors Based on Perylene Diimide Derivatives without Strong Electron Withdrawing Groups | Zendy

Ling M.M. | Zendy; Erk P. | Zendy; Gomez M. | Zendy; Koenemann M. | Zendy; Locklin J. | Zendy; Bao Z. | Zendy

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Air‐Stable n‐Channel Organic Semiconductors Based on Perylene Diimide Derivatives without Strong Electron Withdrawing Groups

Author(s) -

Ling M.M.,

Erk P.,

Gomez M.,

Koenemann M.,

Locklin J.,

Bao Z.

Publication year - 2007

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.200601705

Subject(s) - perylene , diimide , materials science , organic semiconductor , semiconductor , polar effect , substrate (aquarium) , thin film transistor , pulmonary surfactant , fabrication , transistor , optoelectronics , electron , photochemistry , chemical engineering , nanotechnology , organic chemistry , molecule , chemistry , alternative medicine , voltage , oceanography , pathology , engineering , layer (electronics) , quantum mechanics , medicine , physics , geology

Air‐stable transistors based on perylene diimides without strong electron withdrawing groups (see figure) are reported. Through varying the device fabrication process, electron mobilities on the order of 0.1 cm 2 V –1 s –1 are achieved by using silica surfaces treated with a surfactant at elevated substrate temperatures. The devices show good air‐stability, even after prolonged storage in air (> 80 days). These compounds are potentially useful air‐stable n‐type semiconductors for thin film transistors.

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