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The Role of the Ionization Potential in Vacuum‐Level Alignment at Organic Semiconductor Interfaces
Author(s) -
Fukagawa H.,
Kera S.,
Kataoka T.,
Hosoumi S.,
Watanabe Y.,
Kudo K.,
Ueno N.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200601678
Subject(s) - pentacene , work function , materials science , substrate (aquarium) , organic semiconductor , monolayer , ionization energy , kelvin probe force microscope , fermi level , semiconductor , ionization , vacuum level , optoelectronics , charge (physics) , organic electronics , chemical physics , nanotechnology , electron , layer (electronics) , chemistry , voltage , physics , transistor , ion , thin film transistor , organic chemistry , oceanography , quantum mechanics , geology , atomic force microscopy
The charge‐injection barriers at interfaces of a pentacene monolayer are investigated. It is found that the charge‐injection barrier depends on the substrate work function. Substrate work functions smaller than the ionization potential of pentacene film have vacuum‐level alignment, whereas for substrate work functions exceeding the ionization potential of pentacene film, the HOMO of the pentacene film is pinned to near the Fermi level of the substrate (see figure).