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Heteroepitaxial Growth of High‐Quality GaN Thin Films on Si Substrates Coated with Self‐Assembled Sub‐micrometer‐sized Silica Balls
Author(s) -
An S. J.,
Hong Y. J.,
Yi G.C.,
Kim Y.J.,
Lee D. K.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200601628
Subject(s) - materials science , micrometer , thin film , optoelectronics , nanotechnology , lattice constant , layer (electronics) , optics , diffraction , physics
Monodisperse sub‐micrometer‐sized silica balls are employed as an intermediate layer for the heteroepitaxial growth of GaN thin films on Si(111) substrates (see figure). The structural and optical characteristics of the films are shown to be improved compared to conventional techniques, as the maskless overgrowth technique employed simplifies the growth process. This method could be exploited to grow other heteroepitaxial films on substrates with large lattice constants and thermal expansion coefficient mismatches.