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Epitaxial Stabilization of a New Multiferroic Hexagonal Phase of TbMnO 3 Thin Films
Author(s) -
Lee J.H.,
Murugavel P.,
Ryu H.,
Lee D.,
Jo J. Y.,
Kim J. W.,
Kim H. J.,
Kim K. H.,
Jo Y.,
Jung M.H.,
Oh Y. H.,
Kim Y.W.,
Yoon J.G.,
Chung J.S.,
Noh T. W.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200601621
Subject(s) - multiferroics , materials science , ferroelectricity , antiferroelectricity , epitaxy , orthorhombic crystal system , condensed matter physics , thin film , pulsed laser deposition , hexagonal crystal system , polarization (electrochemistry) , hexagonal phase , phase transition , phase (matter) , dielectric , optoelectronics , crystallography , diffraction , nanotechnology , optics , chemistry , physics , organic chemistry , layer (electronics)
Multiferroic hexagonal TbMnO 3 thin films have been epitaxially stabilized on substrates with hexagonal in‐plane symmetry by pulsed laser deposition. The hexagonal TbMnO 3 films show ferroelectricity below ca. 60 K with a remnant polarization 20 times larger compared to its orthorhombic bulk phase. In addition, these samples show an electric‐field‐induced antiferroelectric‐to‐ferroelectric phase transition.