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High‐Performance Organic Semiconductors Based on Fluorene–Phenylene Oligomers with High Ionization Potentials
Author(s) -
Locklin J.,
Ling M. M.,
Sung A.,
Roberts M. E.,
Bao Z.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200601608
Subject(s) - fluorene , materials science , phenylene , organic semiconductor , ionization , transistor , substrate (aquarium) , optoelectronics , field effect transistor , semiconductor , chemical vapor deposition , ionization energy , analytical chemistry (journal) , photochemistry , polymer , organic chemistry , composite material , chemistry , voltage , ion , oceanography , geology , physics , quantum mechanics
A series of phenylene–fluorene derivatives (see figure) are synthesized and evaluated for use in organic field‐effect transistors. Average field‐effect mobilities as high as 0.32 cm 2 V –1 s –1 are achieved by vacuum deposition at low substrate temperatures. The high ionization potentials in the derivatives lead to improved chemical and photostability. Transistor devices show no loss in performance when tested over a period of three months.