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High Field‐Effect Mobility in an Organic Thin‐Film Transistor with a Solid‐State Polymerized Polydiacetylene Film as an Active Layer
Author(s) -
Nishide J.,
Oyamada T.,
Akiyama S.,
Sasabe H.,
Adachi C.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200601419
Subject(s) - materials science , layer (electronics) , substrate (aquarium) , thin film , photopolymer , monomer , deposition (geology) , field effect transistor , transistor , thin film transistor , optoelectronics , active layer , polymerization , electrode , layer by layer , nanotechnology , polymer , composite material , voltage , electrical engineering , chemistry , engineering , paleontology , oceanography , sediment , biology , geology
A highly ordered polydiacetylene thin film was prepared by vacuum deposition of 10,12‐pentacosadiynoic acid, followed by photopolymerization of this layer under UV irradiation. Using an optimum substrate temperature of 50 °C during the monomer deposition, we obtained a high field‐effect hole mobility of 0.8 cm 2 V –1 s –1 with p‐type field‐effect transistor characteristics in the top source–drain electrode configuration.