High Field‐Effect Mobility in an Organic Thin‐Film Transistor with a Solid‐State Polymerized Polydiacetylene Film as an Active Layer | Zendy

Nishide J. | Zendy; Oyamada T. | Zendy; Akiyama S. | Zendy; Sasabe H. | Zendy; Adachi C. | Zendy

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High Field‐Effect Mobility in an Organic Thin‐Film Transistor with a Solid‐State Polymerized Polydiacetylene Film as an Active Layer

Author(s) -

Nishide J.,

Oyamada T.,

Akiyama S.,

Sasabe H.,

Adachi C.

Publication year - 2006

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.200601419

Subject(s) - materials science , layer (electronics) , substrate (aquarium) , thin film , photopolymer , monomer , deposition (geology) , field effect transistor , transistor , thin film transistor , optoelectronics , active layer , polymerization , electrode , layer by layer , nanotechnology , polymer , composite material , voltage , electrical engineering , chemistry , engineering , paleontology , oceanography , sediment , biology , geology

A highly ordered polydiacetylene thin film was prepared by vacuum deposition of 10,12‐pentacosadiynoic acid, followed by photopolymerization of this layer under UV irradiation. Using an optimum substrate temperature of 50 °C during the monomer deposition, we obtained a high field‐effect hole mobility of 0.8 cm 2 V –1 s –1 with p‐type field‐effect transistor characteristics in the top source–drain electrode configuration.

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