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A Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile Memories
Author(s) -
Lee M.J.,
Seo S.,
Kim D.C.,
Ahn S.E.,
Seo D. H.,
Yoo I.K.,
Baek I.G.,
Kim D.S.,
Byun I.S.,
Kim S.H.,
Hwang I.R.,
Kim J.S.,
Jeon S.H.,
Park B. H.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200601025
Subject(s) - materials science , non blocking i/o , bistability , optoelectronics , resistive random access memory , diode , non volatile memory , stack (abstract data type) , oxide , resistor , electrical engineering , metallurgy , voltage , biochemistry , chemistry , computer science , programming language , engineering , catalysis
A one‐diode/one‐resistor structure , Pt/NiO/Pt/p‐NiO x /n‐TiO x /Pt, has been fabricated. This novel structure exhibits bistable resistance switching under forward bias, while the diode suppresses resistance switching in the Pt/NiO/Pt memory cell under reverse bias (see figure). Its low processing temperature and small cell size, as well as excellent rectifying characteristics, make this Pt/p‐NiO x /n‐TiO x /Pt diode structure a promising switch element for high‐ density, nonvolatile memory devices with 3D stack and cross‐point structures.