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A General Route to Printable High‐Mobility Transparent Amorphous Oxide Semiconductors
Author(s) -
Lee D.H.,
Chang Y.J.,
Herman G. S.,
Chang C.H.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200600961
Subject(s) - materials science , halide , amorphous solid , oxide , semiconductor , inkwell , silver halide , thin film , nanotechnology , chemical engineering , optoelectronics , inorganic chemistry , composite material , layer (electronics) , metallurgy , organic chemistry , chemistry , engineering
A general low‐cost method for ink‐jet printing transparent amorphous oxide semiconductors (see figure) is presented. The process uses metal halide precursors dissolved in acetonitrile, and this precursor solution is capable of forming a uniform and continuous metal halide thin film over a large area through both ink‐jet printing and blanket‐coating techniques.