Interface‐Controlled, High‐Mobility Organic Transistors | Zendy

Jurchescu O. D. | Zendy; Popinciuc M. | Zendy; van Wees B. J. | Zendy; Palstra T. T. M. | Zendy

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Interface‐Controlled, High‐Mobility Organic Transistors

Author(s) -

Jurchescu O. D.,

Popinciuc M.,

van Wees B. J.,

Palstra T. T. M.

Publication year - 2007

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.200600929

Subject(s) - pentacene , materials science , transistor , organic semiconductor , interface (matter) , optoelectronics , field effect transistor , semiconductor , nanotechnology , impurity , electron mobility , thin film transistor , electrical engineering , voltage , organic chemistry , chemistry , engineering , capillary number , capillary action , composite material , layer (electronics)

The achievement of high mobilities in field‐effect transistors (FETs) is one of the main challenges for the widespread application of organic conductors in devices. Good device performance of a single‐crystal pentacene FET requires both removal of impurity molecules from the bulk and the manipulation of interface states. A reliable method for fabricating FETs, which involves careful control of the semiconductor/gate interface (see figure), is presented.

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