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Interface‐Controlled, High‐Mobility Organic Transistors
Author(s) -
Jurchescu O. D.,
Popinciuc M.,
van Wees B. J.,
Palstra T. T. M.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200600929
Subject(s) - pentacene , materials science , transistor , organic semiconductor , interface (matter) , optoelectronics , field effect transistor , semiconductor , nanotechnology , impurity , electron mobility , thin film transistor , electrical engineering , voltage , organic chemistry , chemistry , engineering , capillary number , capillary action , composite material , layer (electronics)
The achievement of high mobilities in field‐effect transistors (FETs) is one of the main challenges for the widespread application of organic conductors in devices. Good device performance of a single‐crystal pentacene FET requires both removal of impurity molecules from the bulk and the manipulation of interface states. A reliable method for fabricating FETs, which involves careful control of the semiconductor/gate interface (see figure), is presented.