Premium
Low‐Voltage Polymer Field‐Effect Transistors Gated via a Proton Conductor
Author(s) -
Herlogsson L.,
Crispin X.,
Robinson N. D.,
Sandberg M.,
Hagel O.J.,
Gustafsson G.,
Berggren M.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200600871
Subject(s) - materials science , electrolyte , proton conductor , organic field effect transistor , transistor , optoelectronics , insulator (electricity) , voltage , field effect transistor , electrochemistry , conductor , polymer , electrode , electrical engineering , composite material , chemistry , engineering
Low operating voltages for p‐channel organic field‐effect transistors (OFETs) can be achieved by using an electrolyte as the gate insulator. However, mobile anions in the electrolyte can lead to undesired electrochemistry in the channel. In order to avoid this, a polyanionic electrolyte is used as the gate insulator. The resulting OFET has operating voltages of less than 1 V (see figure) and shows fast switching (less than 0.3 ms) in ambient atmosphere.