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The Negative Effect of High‐Temperature Annealing on Charge‐Carrier Lifetimes in Microcrystalline PCBM
Author(s) -
Warman J. M.,
de Haas M. P.,
Anthopoulos T. D.,
de Leeuw D. M.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200600554
Subject(s) - materials science , microcrystalline , annealing (glass) , optoelectronics , microcrystalline cellulose , field effect transistor , microcrystalline silicon , charge carrier , conductivity , transistor , chemical engineering , analytical chemistry (journal) , composite material , silicon , crystallography , chemistry , electrical engineering , organic chemistry , voltage , engineering , cellulose , amorphous silicon , crystalline silicon
Annealing microcrystalline phenyl‐ C 61 ‐butyric acid methyl ester (PCBM) above 100 °C results in the formation of hole traps. This is observed as an irreversible decrease in the lifetime of the transient conductivity of pulse‐ ionized microcrystalline PCBM powder at room temperature after annealing at different elevated temperatures (see figure). Caution is therefore advised in the routine use of pre‐annealing to “improve” the performance of PCBM‐based photovoltaic or field‐effect transistor devices.