In‐Plane Bandgap Engineering by Modulated Hydrogenation of Dilute Nitride Semiconductors | Zendy

Felici M. | Zendy; Polimeni A. | Zendy; Salviati G. | Zendy; Lazzarini L. | Zendy; Armani N. | Zendy; Masia F. | Zendy; Capizzi M. | Zendy; Martelli F. | Zendy; Lazzarino M. | Zendy; Bais G. | Zendy; Piccin M. | Zendy; Rubini S. | Zendy; Franciosi A. | Zendy

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In‐Plane Bandgap Engineering by Modulated Hydrogenation of Dilute Nitride Semiconductors

Author(s) -

Felici M.,

Polimeni A.,

Salviati G.,

Lazzarini L.,

Armani N.,

Masia F.,

Capizzi M.,

Martelli F.,

Lazzarino M.,

Bais G.,

Piccin M.,

Rubini S.,

Franciosi A.

Publication year - 2006

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.200600487

Subject(s) - cathodoluminescence , materials science , nitride , band gap , wide bandgap semiconductor , semiconductor , optoelectronics , plane (geometry) , hydrogen , nanotechnology , luminescence , chemistry , organic chemistry , geometry , mathematics , layer (electronics)

In ‐ plane bandgap engineering of dilute nitrides by spatially delimited hydrogen irradiation (left, microphotoluminescence image of GaAsN) or displacement (right, cathodoluminescence image of hydrogenated GaAsN) is reported.

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