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In‐Plane Bandgap Engineering by Modulated Hydrogenation of Dilute Nitride Semiconductors
Author(s) -
Felici M.,
Polimeni A.,
Salviati G.,
Lazzarini L.,
Armani N.,
Masia F.,
Capizzi M.,
Martelli F.,
Lazzarino M.,
Bais G.,
Piccin M.,
Rubini S.,
Franciosi A.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200600487
Subject(s) - cathodoluminescence , materials science , nitride , band gap , wide bandgap semiconductor , semiconductor , optoelectronics , plane (geometry) , hydrogen , nanotechnology , luminescence , chemistry , organic chemistry , geometry , mathematics , layer (electronics)
In ‐ plane bandgap engineering of dilute nitrides by spatially delimited hydrogen irradiation (left, microphotoluminescence image of GaAsN) or displacement (right, cathodoluminescence image of hydrogenated GaAsN) is reported.