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Polymer/YO x Hybrid‐Sandwich Gate Dielectrics for Semitransparent Pentacene Thin‐Film Transistors Operating Under 5 V
Author(s) -
Hwang D. K.,
Kim C. S.,
Choi J. M.,
Lee K.,
Park J. H.,
Kim E.,
Baik H. K.,
Kim J. H.,
Im S.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200600409
Subject(s) - pentacene , materials science , thin film transistor , dielectric , optoelectronics , gate dielectric , transistor , high κ dielectric , thin film , voltage , electrical engineering , nanotechnology , layer (electronics) , engineering
A hybrid‐sandwich dielectric —combining the advantages of inorganic high‐dielectric‐constant dielectrics and ultrathin organic dielectrics—for the gate of pentacene thin‐film transistors (TFTs, see figure) is presented. The performance of the TFTs and resistance‐load inverters constructed with them is shown to be satisfactory even when the devices are operated at the low voltage of –5 V.