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Quantum Dot Thin Layers Templated on ZnO Inverse Opals
Author(s) -
García P. D.,
Blanco Á.,
Shavel A.,
Gaponik N.,
Eychmüller A.,
RodríguezGonzález B.,
LizMarzán L. M.,
López C.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200600376
Subject(s) - materials science , quantum dot , photoluminescence , photonic crystal , optoelectronics , photonics , colloidal crystal , semiconductor , nanotechnology , infiltration (hvac) , composite number , colloid , band gap , spontaneous emission , composite material , optics , chemical engineering , laser , physics , engineering
A novel composite material integrating ZnO and semiconductor colloidal quantum dots (QDs) in a photonic crystal (see figure) is fabricated by accurate infiltration in two hierarchical steps of colloidal self‐assembly. The presence of a high‐energy photonic gap has a strong effect on the QD spontaneous emission. A further progressive infiltration with more ZnO is useful to tune this photonic effect through the photoluminescence emission spectrum.