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Self‐Aligned Nanolenses with Multilayered Ge/SiO 2 Core/Shell Structures on Si (001)
Author(s) -
Chen H.C.,
Lee S.W.,
Chen L.J.
Publication year - 2007
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200600307
Subject(s) - materials science , schematic , etching (microfabrication) , optoelectronics , quantum dot , transmission electron microscopy , photodetector , shell (structure) , core (optical fiber) , focus (optics) , optics , nanotechnology , layer (electronics) , composite material , physics , engineering , electronic engineering
Selective etching of multilayered Ge‐quantum‐dot/Si‐spacer has been used to fabricate stacked Ge@SiO 2 nanolenses with the ability to filter and focus 1.5 μm light. These lenses have potential for use as Si‐compatible photodetector materials for telecommunications. The left figure is a schematic sketch of the nanolenses and the right figure is a transmission electron microscopy image of the lenses.
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