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Improving Organic Thin‐Film Transistor Performance through Solvent‐Vapor Annealing of Solution‐Processable Triethylsilylethynyl Anthradithiophene
Author(s) -
Dickey K. C.,
Anthony J. E.,
Loo Y.L.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200600188
Subject(s) - materials science , thin film transistor , annealing (glass) , transistor , thin film , optoelectronics , fabrication , hysteresis , crystallization , solution process , solvent , saturation (graph theory) , voltage , nanotechnology , chemical engineering , composite material , condensed matter physics , electrical engineering , organic chemistry , medicine , chemistry , alternative medicine , physics , engineering , layer (electronics) , pathology , combinatorics , mathematics
The current–voltage characteristics of triethylsilylethynyl anthradithiophene (TES ADT) thin‐film transistors can be improved dramatically by a simple and straightforward solvent‐vapor annealing process after device fabrication. Exposing the transistors to dichloroethane vapor for 2 min induces structural rearrangement and crystallization of TES ADT (see figure and cover). This procedure results in drastic increases in on currents; the saturation mobility increases by two orders of magnitude and the current–voltage hysteresis is largely eliminated.