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Formation of Contact Holes on Bumps on Semiconductor Chip by Micro‐Moses Effect
Author(s) -
Uemura T.,
Kimura T.,
Sugitani M.,
Kumakura M.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200600085
Subject(s) - materials science , optoelectronics , chip , semiconductor , flip chip , connection (principal bundle) , nanotechnology , electrical engineering , mechanical engineering , adhesive , layer (electronics) , engineering
Ferromagnetic bumps can effectively be dewetted using the micro‐Moses effect, resulting in formation of contact holes on the bumps. Due to the contact holes, electrical contact is made to a complementary flip‐chip structure (see figure). In this way, the connection of two chips can be successfully achieved.