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Active Area and Channel Formation for Polymer Thin‐Film Transistors
Author(s) -
Kang H.,
Park J.,
Lee H. H.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200600038
Subject(s) - materials science , thin film transistor , fabrication , transistor , optoelectronics , channel (broadcasting) , semiconductor , polymer , nanotechnology , electrical engineering , layer (electronics) , composite material , voltage , engineering , medicine , alternative medicine , pathology
The simultaneous fabrication of both the active area and the channel of a thin‐film transistor (TFT) is achieved by a reverse soft‐molding process. This fabrication process leads to a well‐ordered semiconductor film and to the formation of a channel whose length could be made, in principle, as small as desired for the top‐contact device (see figure). The electrical characteristics of the device thus fabricated are equal to those obtainable with solution‐processed polymer TFTs. (Scale bar is 2 μm.)