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Enhancement of Radiative Recombination in Silicon via Phonon Localization and Selection‐Rule Breaking
Author(s) -
Cloutier S. G.,
Hsu C.H.,
Kossyrev P. A.,
Xu J.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200600001
Subject(s) - photocurrent , photoluminescence , materials science , recombination , spontaneous emission , phonon , silicon , optoelectronics , radiative transfer , raman spectroscopy , non radiative recombination , chemical physics , condensed matter physics , semiconductor materials , semiconductor , optics , physics , chemistry , laser , gene , biochemistry
Enhanced radiative recombination in a periodically nanoengineered silicon‐ on‐insulator structure (see figure and cover) is studied using micro‐Raman, photoluminescence, and photocurrent spectroscopies. It is shown that the enhancement is due to phonon‐ localization effects, leading to a relaxation of the fundamental k ‐selection rule disfavoring light emission in bulk silicon.