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UV Random Lasing Action in p‐SiC(4H)/i‐ZnO–SiO 2 Nanocomposite/n‐ZnO:Al Heterojunction Diodes
Author(s) -
Leong E. S. P.,
Yu S. F.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200502761
Subject(s) - lasing threshold , materials science , random laser , optoelectronics , heterojunction , nanocomposite , diode , band gap , doping , layer (electronics) , active layer , nanotechnology , thin film transistor , wavelength
UV random lasing in p–i–n ZnO‐based heterojunction diodes is achieved. The UV emission originates from the use of an intrinsic ZnO–SiO 2 nanocomposite layer; the use of ZnO powders can improve the electrical‐to‐optical conversion efficiency of the heterojunction. The patterned ZnO clusters in the SiO 2 matrix enhance the quality of the random media (see figure) thus sustaining the random lasing action. If low‐index, p‐doped, wide‐bandgap materials are used as the hole‐injection layer, strong coherent random lasing could be achieved.