Chemistry for Positive Pattern Transfer Using Area‐Selective Atomic Layer Deposition | Zendy

Chen R. | Zendy; Bent S. F. | Zendy

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Chemistry for Positive Pattern Transfer Using Area‐Selective Atomic Layer Deposition

Author(s) -

Chen R.,

Bent S. F.

Publication year - 2006

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.200502470

Subject(s) - atomic layer deposition , materials science , monolayer , layer (electronics) , substrate (aquarium) , resist , silicon , nanotechnology , hydride , atomic layer epitaxy , thin film , deposition (geology) , adsorption , silicon oxide , dielectric , chemical engineering , optoelectronics , chemistry , organic chemistry , metal , paleontology , oceanography , silicon nitride , engineering , sediment , metallurgy , biology , geology

A chemically selective process to achieve high‐resolution area‐selective atomic layer deposition (ALD) of Pt thin films on dielectrics (see figure) is introduced. By utilizing the intrinsically selective adsorption behavior of 1‐octadecene, a monolayer resist is attached only to the hydride‐terminated silicon regions of a patterned SiO 2 /Si substrate. Subsequently, a Pt thin film is selectively deposited only onto the oxide regions by ALD.

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