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Chemistry for Positive Pattern Transfer Using Area‐Selective Atomic Layer Deposition
Author(s) -
Chen R.,
Bent S. F.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200502470
Subject(s) - atomic layer deposition , materials science , monolayer , layer (electronics) , substrate (aquarium) , resist , silicon , nanotechnology , hydride , atomic layer epitaxy , thin film , deposition (geology) , adsorption , silicon oxide , dielectric , chemical engineering , optoelectronics , chemistry , organic chemistry , metal , paleontology , oceanography , silicon nitride , engineering , sediment , metallurgy , biology , geology
A chemically selective process to achieve high‐resolution area‐selective atomic layer deposition (ALD) of Pt thin films on dielectrics (see figure) is introduced. By utilizing the intrinsically selective adsorption behavior of 1‐octadecene, a monolayer resist is attached only to the hydride‐terminated silicon regions of a patterned SiO 2 /Si substrate. Subsequently, a Pt thin film is selectively deposited only onto the oxide regions by ALD.