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High‐Mobility Ambipolar Transport in Organic Light‐Emitting Transistors
Author(s) -
Dinelli F.,
Capelli R.,
Loi M. A.,
Murgia M.,
Muccini M.,
Facchetti A.,
Marks T. J.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200502164
Subject(s) - ambipolar diffusion , materials science , optoelectronics , transistor , diimide , laser , nanotechnology , optics , fluorescence , physics , plasma , perylene , quantum mechanics , voltage
Organic light‐emitting transistors based on bilayered structures (see figure) exhibit balanced ambipolar transport and mobility values as large as 3 × 10 –2 cm 2 V –1 s –1 . The best performances are realized by sequentially depositing α,ω‐dihexyl‐quaterthiophene (DH4T) as p‐type and N , N ′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13) as n‐type materials. Laser‐scanning confocal microscopy allows selective imaging of the layers.