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Hybrid Inorganic/Organic Semiconductor Heterostructures with Efficient Non‐Radiative Energy Transfer
Author(s) -
Heliotis G.,
Itskos G.,
Murray R.,
Dawson M. D.,
Watson I. M.,
Bradley D. D. C.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200501949
Subject(s) - materials science , overlayer , semiconductor , heterojunction , optoelectronics , organic semiconductor , energy transfer , nanotechnology , engineering physics , condensed matter physics , physics , engineering
An inorganic/organic hybrid semiconductor heterostructure is reported, in which an InGaN quantum well is non‐radiatively coupled to a semiconducting polymer overlayer (see Figure). This architecture has the potential to take advantage of the complementary attributes of the two types of semiconductor that it contains, and may lead to devices with highly efficient emission across the entire visible spectrum.