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Microstructure and Composition of Focused‐Ion‐Beam‐Deposited Pt Contacts to GaN Nanowires
Author(s) -
Tham D.,
Nam C.Y.,
Fischer J. E.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200501832
Subject(s) - materials science , nanowire , amorphous solid , microstructure , focused ion beam , layer (electronics) , optoelectronics , sputtering , ion beam , ion , nanotechnology , beam (structure) , composite material , crystallography , thin film , optics , physics , quantum mechanics , chemistry
Characterization of focused ion beam (FIB)‐deposited Pt contacts to GaN nanowires (see Figure, green) shows that these contacts contain high densities of Pt nanocrystallites (red) embedded in an amorphous C + Ga matrix (purple). Regions with lower Pt nanocrystallite densities (light blue) have also been found. Sputter damage generally removes the top of the GaN layer, leaving a disordered region below. These observations suggest reasons for the unusually low resistance of FIB‐deposited Pt contacts to GaN nanowires.