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Direction‐Dependent Homoepitaxial Growth of GaN Nanowires
Author(s) -
Li H.,
Chin A. H.,
Sunkara M. K.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200501716
Subject(s) - nanowire , materials science , hexagonal crystal system , prism , nanotechnology , optoelectronics , crystallography , optics , chemistry , physics
GaN nanowires with vastly different morphologies depending upon the growth direction are produced by direct nitridation and vapor transport of Ga in disassociated ammonia. Nanowires grown homoepitaxially along the c ‐direction develop hexagonal‐prism island morphologies (see Figure, left, and Cover), while wires grown along the a ‐direction form uniform, belt‐shaped morphologies (Figure, right). A “ballistic” transport phenomenon for adatoms is proposed to explain the observed prismatic island morphologies.