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Pyramid‐Shaped Si/Ge Superlattice Quantum Dots with Enhanced Photoluminescence Properties
Author(s) -
Chen H.C.,
Wang C.W.,
Lee S.W.,
Chen L.J.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200501691
Subject(s) - superlattice , nanodot , photoluminescence , materials science , quantum dot , heterojunction , pyramid (geometry) , optoelectronics , etching (microfabrication) , nanotechnology , optics , layer (electronics) , physics
Pyramid‐shaped Si/Ge superlattice quantum dots (QDs, see Figure) have been fabricated using self‐assembled Ge QDs as a “virtual nanomask” for selective wet etching of the Si/Ge superlattice. The nanodots exhibit an approximately tenfold increase in photoluminescence over conventional Si/Ge superlattice heterostructures.
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