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Defect‐Mode Lasing with Lowered Threshold in a Three‐Layered Hetero‐Cholesteric Liquid‐Crystal Structure
Author(s) -
Song M. H.,
Ha N. Y.,
Amemiya K.,
Park B.,
Takanishi Y.,
Ishikawa K.,
Wu J. W.,
Nishimura S.,
Toyooka T.,
Takezoe H.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200501438
Subject(s) - lasing threshold , materials science , cholesteric liquid crystal , liquid crystal , mode (computer interface) , layer (electronics) , optoelectronics , photonic crystal , enhanced data rates for gsm evolution , optics , nanotechnology , physics , wavelength , telecommunications , computer science , operating system
A novel defect mode is realized in a three‐layered structure: a left‐handed cholesteric liquid crystal (CLC) layer sandwiched between right‐handed CLC films (see Figure). The defect states emerge, and the photonic density of state is resonantly enhanced when the defect mode coincides with the edge mode. The lasing from this enhanced mode is found to show a lower threshold value.