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A Semiconductor‐Nanowire Assembly of Ultrahigh Junction Density by the Langmuir–Blodgett Technique
Author(s) -
Acharya S.,
Panda A. B.,
Belman N.,
Efrima S.,
Golan Y.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200501234
Subject(s) - nanowire , materials science , langmuir–blodgett film , fabrication , semiconductor , deposition (geology) , nanotechnology , optoelectronics , monolayer , medicine , paleontology , alternative medicine , pathology , sediment , biology
The assembly of ultrathin ZnSe nanowires over large areas (see Figure) is achieved by a Langmuir–Blodgett technique in a single step with uniform registry, and without any further secondary technique for alignment. Ultrahigh packing density of junctions, exceeding over 60 × 10 3 μm –2 , is achieved by subsequent deposition of a second two‐dimensional nanowire assembly with a controlled angle between the two layers. The resulting network notably surpasses the limit of conventional fabrication techniques.