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Kinetics and Mechanism of Atomic Force Microscope Local Oxidation on Hydrogen‐Passivated Silicon in Inert Organic Solvents
Author(s) -
Kinser C. R.,
Schmitz M. J.,
Hersam M. C.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200501231
Subject(s) - materials science , conductive atomic force microscopy , silicon , inert , atomic force microscopy , hydrogen , chemical physics , nanotechnology , chemical engineering , oxide , optoelectronics , organic chemistry , chemistry , engineering , metallurgy
Conductive atomic force microscope (AFM) nanopatterning on hydrogen‐terminated silicon in a hydrophobic organic solvent under ambient conditions produces features consistent with AFM field‐induced oxidation. The growth rate of the oxide features (see figure) exhibits modulation consistent with a space‐charge‐limited growth mechanism.