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Multicolor Photoluminescence from Porous Silicon Using Focused, High‐Energy Helium Ions
Author(s) -
Teo E. J.,
Breese M. B. H.,
Bettiol A. A.,
Mangaiyarkarasi D.,
Champeaux F.,
Watt F.,
Blackwood D. J.
Publication year - 2006
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200501138
Subject(s) - materials science , photoluminescence , porous silicon , wafer , ion , silicon , helium , optoelectronics , porosity , irradiation , etching (microfabrication) , ion implantation , nanotechnology , atomic physics , composite material , physics , quantum mechanics , layer (electronics) , nuclear physics
An image of a dragon is replicated in porous silicon by using 2 MeV helium irradiation prior to electrochemical etching. By careful control of the ion dose at each region, the photoluminescence (PL) wavelength can be tuned to produce a PL image matching that of the original. Results have been explained in terms of ion‐induced changes in the wafer resistivity.