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High‐Performance Ambipolar Pentacene Organic Field‐Effect Transistors on Poly(vinyl alcohol) Organic Gate Dielectric
Author(s) -
Singh Th. B.,
Meghdadi F.,
Günes S.,
Marjanovic N.,
Horowitz G.,
Lang P.,
Bauer S.,
Sariciftci N. S.
Publication year - 2005
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200501109
Subject(s) - pentacene , materials science , ambipolar diffusion , organic semiconductor , dielectric , gate dielectric , vinyl alcohol , optoelectronics , organic field effect transistor , transistor , semiconductor , capacitance , field effect transistor , thin film transistor , nanotechnology , voltage , polymer , electrical engineering , electron , composite material , electrode , chemistry , physics , engineering , layer (electronics) , quantum mechanics
Growing organic semiconductors on dielectrics with different surface energies and dielectric constants results in striking changes of the film morphology (Figure, right). Ambipolar transport is reported in pentacene transistors on a PVA gate dielectric (left). The current–voltage characteristics correlate with capacitance–voltage investigations on metal–insulator–semiconductor structures.