Premium
Control of Carrier Density by a Solution Method in Carbon‐Nanotube Devices
Author(s) -
Takenobu T.,
Kanbara T.,
Akima N.,
Takahashi T.,
Shiraishi M.,
Tsukagoshi K.,
Kataura H.,
Aoyagi Y.,
Iwasa Y.
Publication year - 2005
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200500759
Subject(s) - materials science , carbon nanotube , doping , field effect transistor , molecule , nanotechnology , carbon nanotube quantum dot , adsorption , carbon nanotube field effect transistor , nanotube , transistor , carbon fibers , voltage , optoelectronics , chemical physics , chemical engineering , organic chemistry , electrical engineering , composite material , chemistry , engineering , physics , composite number
A new method for controlling the hole density in single‐walled carbon nanotube field‐effect transistors (SWCNT‐FETs) by solution‐based chemical doping is presented. The use of organic molecules that adsorb onto SWCNTs from solution is investigated. The transfer characteristics of the SWCNT‐FETs exhibit continuous and precise shifts in threshold voltages (see Figure) upon doping with F 4 TCNQ molecules, even in air.