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Magnetocapacitance and Magnetoresistance Near Room Temperature in a Ferromagnetic Semiconductor: La 2 NiMnO 6
Author(s) -
Rogado N. S.,
Li J.,
Sleight A. W.,
Subramanian M. A.
Publication year - 2005
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200500737
Subject(s) - magnetoresistance , electrical resistivity and conductivity , magnetocapacitance , materials science , condensed matter physics , ferromagnetism , dielectric , semiconductor , neutron diffraction , magnetic field , diffraction , optoelectronics , multiferroics , ferroelectricity , physics , optics , quantum mechanics
Neutron diffraction studies confirm that La 2 NiMnO 6 is ferromagnetic with moments on Ni and Mn indicating Ni II and Mn IV (small and large spheres, respectively, in Figure). Electrical resistivity measurements show semiconducting behavior with a room temperature conductivity of ∼10 2 Ω cm and very high resistivity at low temperature. On application of a magnetic field, significant changes in electrical resistivity and dielectric constant occur at temperatures as high as 280 K.