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An Organic Field‐Effect Transistor with Programmable Polarity
Author(s) -
Naber R. C. G.,
Blom P. W. M.,
Gelinck G. H.,
Marsman A. W.,
de Leeuw D. M.
Publication year - 2005
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200500561
Subject(s) - ambipolar diffusion , materials science , transistor , polarity (international relations) , ferroelectricity , field effect transistor , optoelectronics , organic field effect transistor , polarization (electrochemistry) , voltage , nanotechnology , electrical engineering , electron , physics , genetics , biology , cell , engineering , chemistry , quantum mechanics , dielectric
Selective ambipolar transport in solution‐processed polymer ferroelectric field‐effect transistors (FeFETs) is reported. Depending on the polarization state of the ferroelectric, either remanent hole or electron accumulation is achieved in the transistor, as illustrated by a butterfly‐shaped current–voltage ( I–V ) transfer curve (see Figure). For memory purposes, the polarity of the channel can be easily read using the change in drain current in response to a small gate voltage.