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Direct Correlation of Organic Semiconductor Film Structure to Field‐Effect Mobility
Author(s) -
DeLongchamp D. M.,
Sambasivan S.,
Fischer D. A.,
Lin E. K.,
Chang P.,
Murphy A. R.,
Fréchet J. M. J.,
Subramanian V.
Publication year - 2005
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200500263
Subject(s) - materials science , organic semiconductor , electric field , antibonding molecular orbital , optoelectronics , enhanced data rates for gsm evolution , molecule , chemical physics , spectroscopy , semiconductor , optics , atomic orbital , organic chemistry , chemistry , telecommunications , physics , quantum mechanics , computer science , electron
Near‐edge X‐ray fine structure spectroscopy is used to measure simultaneous chemical conversion, molecular ordering, and defect formation in soluble oligothiophene precursor films. Film structure is correlated to OFET performance. Molecular orientation is determined by evaluating antibonding orbital overlap with the polarized electric field vector of incident soft X‐rays (see Figure and cover). Upon conversion, the molecules become vertically oriented, allowing π overlap in the plane of hole transport.