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Memory Effect and Negative Differential Resistance by Electrode‐ Induced Two‐Dimensional Single‐ Electron Tunneling in Molecular and Organic Electronic Devices
Author(s) -
Tang W.,
Shi H. Z.,
Xu G.,
Ong B. S.,
Popovic Z. D.,
Deng J. C.,
Zhao J.,
Rao G. H.
Publication year - 2005
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200500232
Subject(s) - quantum tunnelling , materials science , nucleation , electron , electrode , diode , negative resistance , chemical physics , optoelectronics , nanotechnology , condensed matter physics , chemistry , physics , organic chemistry , quantum mechanics , voltage
Mysterious negative differential resistances and memory effects are commonly observed in molecular electronic thin‐film devices such as organic light‐emitting diodes. The authors describe how this may result from the formation of metallic nanospheres (see Figure) inside crevices resulting from defects, such as dust particles. Single‐electron tunneling between the nanospheres, which are formed by nucleation and growth processes at the defect sites, results in the observed anomalous effects.