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Well‐Oriented Silicon Thin Films with High Carrier Mobility on Polycrystalline Substrates
Author(s) -
Findikoglu A. T.,
Choi W.,
Matias V.,
Holesinger T. G.,
Jia Q. X.,
Peterson D. E.
Publication year - 2005
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200500040
Subject(s) - materials science , crystallite , thin film , doping , silicon , optoelectronics , electron mobility , polycrystalline silicon , semiconductor , alloy , nanotechnology , composite material , thin film transistor , metallurgy , layer (electronics)
Si thin films, grown using ion‐beam‐assisted deposition of buffer layers on polycrystalline metal‐alloy tapes (see Figure), show out‐of‐plane and in‐plane mosaic spreads of 0.8° and 1.3°, respectively, and a room‐temperature Hall mobility of 89 cm 2 V –1 s –1 for a doping concentration of 4.4 × 10 16 cm –3 . These results provide proof‐of‐concept for a promising materials technology that does not require lattice‐matched, single‐crystal substrates for deposition of well‐oriented, high‐carrier‐mobility semiconductor thin films.