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Growth of Silicon Oxide in Thin Film Block Copolymer Scaffolds
Author(s) -
Kim D. H.,
Jia X.,
Lin Z.,
Guarini K. W.,
Russell T. P.
Publication year - 2004
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200404906
Subject(s) - materials science , copolymer , silicon , silicon tetrachloride , silicon oxide , nanostructure , nanometre , oxide , nanotechnology , thin film , nanoscopic scale , optoelectronics , composite material , polymer , silicon nitride , metallurgy
Thin films of asymmetric diblock copolymers have been used as scaffolds to define an ordered array of nanometer‐scale reaction vessels in which high density arrays of silicon oxide nanostructures (see Figure) are produced by exposure to silicon tetrachloride. Such site‐specific silicon oxide nanostructures could have widespread uses for sensory and optoelectronic applications.