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Thickness Dependence of Mobility in Pentacene Thin‐Film Transistors
Author(s) -
Ruiz R.,
Papadimitratos A.,
Mayer A. C.,
Malliaras G. G.
Publication year - 2005
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200402077
Subject(s) - pentacene , materials science , thin film transistor , monolayer , transistor , optoelectronics , layer (electronics) , saturation (graph theory) , dielectric , field effect transistor , gate dielectric , electron mobility , nanotechnology , electrical engineering , voltage , mathematics , engineering , combinatorics
The field‐effect mobility of pentacene transistors saturates when six monolayers of pentacene are deposited on the gate dielectric. This saturation is not caused by the formation of islands, as the early stages of growth have been found to take place in a layer‐by‐layer fashion, and layer completion continues well past six monolayers (see Figure).