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A Three‐Dimensional Porous Silicon p–n Diode for Betavoltaics and Photovoltaics
Author(s) -
Sun W.,
Kherani N. P.,
Hirschman K. D.,
Gadeken L. L.,
Fauchet P. M.
Publication year - 2005
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.200401723
Subject(s) - photovoltaics , materials science , silicon , diode , porous silicon , photovoltaic system , energy conversion efficiency , optoelectronics , porosity , energy transformation , layer (electronics) , engineering physics , nanotechnology , composite material , electrical engineering , physics , thermodynamics , engineering
Three‐dimensional porous silicon p–n diodes made by standard industrial processing (see Figure) result in an energy‐conversion layer with a large surface/volume ratio. This structure increases radioisotope energy‐conversion efficiency tenfold, and could lead to a practical nuclear battery that lasts for many years. Experimental results also show marked photovoltaic response.